According to Shanghai Dragon TV, the first China-made 6-inch SiC MOSFET (metal oxide field effect transistor) wafer was officially released in Shanghai on October 16.
According to reports, China made 6-inch SiC MOSFET wafers, which are made of SiC (third-generation semiconductor material) and are used in new energy industries such as new energy vehicles and photovoltaic power generation, and other new energy industries.
Zhang Yongxi, founder and general manager of Shanghai Inventchip Technology, said: “If a SiC MOSFET (metal oxide field effect transistor) new energy vehicle is used for electric drive, the battery life can be increased by 5% to 10%. With the addition of photovoltaic inverters with SiC technology devices, the efficiency can also be greatly improved, especially in terms of energy consumption reduced by 50%.”
Shanghai Inventchip Electronic Technology Co., Ltd. is a high-tech chip company focusing on the SiC semiconductor field. It was established in 2017 in the Shanghai Free Trade Zone. The official said that after three years of in-depth research and development, Inventchip Electronics had become the first company in China to master 6-inch SiC MOSFET and SBD processes, as well as SiC MOSFET driver chips.