According to Shanghai Dragon TV, the first China-made 6-inch SiC MOSFET (metal-oxide-semiconductor field-effect transistor) wafer was released in Shanghai on October 16.
According to reports, China has successfully manufactured 6-inch silicon carbide MOSFET wafers. These wafers are made of SiC (a third-generation semiconductor material) and are widely used in new energy industries, including new energy vehicles and photovoltaic power generation.
Zhang Yongxi, founder and general manager of Shanghai Inventchip Technology, stated: ‘If SiC MOSFETs (metal-oxide-semiconductor field-effect transistors) are applied to the electric drive systems of new energy vehicles, the battery range can be increased by 5% to 10%. If paired with photovoltaic inverters using silicon carbide technology, efficiency will be significantly improved, and energy consumption can be reduced by 50%.’
Shanghai Inventchip Electronics Technology Co., Ltd. is a high-tech chip company specializing in SiC semiconductors, established in 2017 in the Shanghai Free Trade Zone. The person in charge of the company stated that after three years of in-depth research and development, Inventchip Electronics has become the first company in China to master the 6-inch SiC MOSFET and SBD process, as well as SiC MOSFET driver chips.
 wafer was released in Shanghai on October 16.){kind=link}